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jmnic product specification silicon pnp power transistors 2SA1051 description ? with to-3 package ? high transition frequency ? excellent safe operating area applications ? for audio and general purpose power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -1.5 a p c collector power dissipation t c =25 ?? 150 w t j junction temperature 175 ?? t stg storage temperature -55~200 ?? fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA1051 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -150 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -150 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-10a; i b =-1a -3.0 v v be base-emitter on voltage i c =-8a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-140v; i e =0 -10 | a i ebo emitter cut-off current v eb =-5v; i c =0 -10 | a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-8a ; v ce =-5v 35 f t transition frequency i c =-1a ; v ce =-10v 60 mhz
jmnic product specification 3 silicon pnp power transistors 2SA1051 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)

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